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 INCHANGE Semiconductor
www..com
isc RF Product Specification
isc Silicon NPN RF Transistor
BFQ591
DESCRIPTION *High Power Gain *High Current Gain Bandwidth Product *Low Noise Figure
APPLICATIONS *Designed for use in MATV or CATV amplifiers and RF communications subscribers equipment.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
15
V
VEBO
Emitter-Base Voltage
3
V
IC
Collector Current-Continuous
200
mA
PC
Collector Power Dissipation @TC=25
2.25
W
TJ
Junction Temperature
175
Tstg
Storage Temperature Range
-65~150
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
www..com
isc RF Product Specification
isc Silicon NPN RF Transistor
ELECTRICAL CHARACTERISTICS
TC=25 unless otherwise specified SYMBOL V(BR)CES V(BR)CBO V(BR)EBO ICBO hFE fT PG PG Cre S21e2 VO PARAMETER Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current DC Current Gain Current-Gain--Bandwidth Product Power Gain Power Gain Feedback Capacitance Insertion Power Gain Output Voltage CONDITIONS IC= 0.1mA ; IB= 0 IC= 0.1m A ; IE= 0 IE= 0.1m A ; IC= 0 VCB= 10V; IE= 0 IC= 70mA ; VCE= 8V IC= 70mA ; VCE= 12V; f= 1GHz IC= 70mA;VCE= 12V; f= 900MHz IC= 70mA;VCE= 12V; f= 2GHz IE= 0 ; VCB= 12V; f= 1MHz IC= 70mA ; VCE= 12V; f= 1GHz note 60 7 11 5.5 0.8 10 MIN 15 20 3
BFQ591
TYP.
MAX
UNIT V V V
0.1 250
A
GHz dB dB pF dB mV
700
Note:
dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz;
measured @ f(p+q+r) = 793.25 MHz.
isc Websitewww.iscsemi.cn
2
INCHANGE Semiconductor
www..com
isc RF Product Specification
isc Silicon NPN RF Transistor
BFQ591
isc Websitewww.iscsemi.cn
INCHANGE Semiconductor
www..com
isc RF Product Specification
isc Silicon NPN RF Transistor
BFQ591
isc Websitewww.iscsemi.cn
4


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